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TYPICAL PERFORMANCE CURVES
APT35GN120B APT35GN120B_S(G) APT35GN120S APT35GN120BG APT35GN120SG 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
G
(B)
TO -2 47
D3PAK
(S)
C G E
* 1200V NPT Field Stop
* * * * Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability
C
E
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT35GN120B_S(G) UNIT Volts
1200 30 94 46 105 105A @ 1200V 379 -55 to 150
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 5 1.4 5.8 1.7 1.9 100
2
6.5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125C)
2.1
I CES I GES RGINT
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
A nA
Rev D 7-2009 050-7601
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
TBD 600 6
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT35GN120B_S(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 35A TJ = 150C, R G = 2.2 7, VGE = 15V, L = 100H,VCE = 1200V VCC = 960V, VGE = 15V, TJ = 125C, R G = 2.2 7 Inductive Switching (25C) VCC = 800V VGE = 15V I C = 35A
4 5
MIN
TYP
MAX
UNIT
2500 150 120 9.5 220 15 130 105 10 24 22 300 55 TBD 2395 2315 24 22 365 100 TBD 3745 3435 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area
s
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
RG = 2.2 7 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 35A RG = 2.2 7
55
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.33 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
Rev D 7-2009
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
050-7601
TYPICAL PERFORMANCE CURVES
120 15V IC, COLLECTOR CURRENT (A) 12V IC, COLLECTOR CURRENT (A) 100 80 11V 60 10V 40 9V 20 8V 0 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
APT35GN120B_S(G)
120 15V 100 12V 11V 10V 40 9V 20 0 8V 7V 0 2 4 6 8 10 12 14 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
80
60
FIGURE 1, Output Characteristics(TJ = 25C) 100 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C) 16 14 12 VCE = 600V 10 8 6 4 2 0 0 50 100 150 200 GATE CHARGE (nC) 250 VCE = 960V
I = 35A C T = 25C
J
IC, COLLECTOR CURRENT (A)
80 TJ = 125C TJ = 25C 40 TJ = -55C
VCE = 240V
60
20
0
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4, Gate Charge 3 IC = 70A 2.5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4 3.5 3 2.5 2 1.5 1.0 0.5 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 0 8 IC = 17.5A IC = 35A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 70A
2 IC = 35A 1.5 1 0.5 IC = 17.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.05
IC, DC COLLECTOR CURRENT(A)
120 100 80 60 40 20 0 -50 Rev D 7-2009 050-7601
Lead Temperature Limited
1.00
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
APT35GN120B_S(G)
30 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25
VGE = 15V
450 350 300 250
VGE =15V,TJ=25C VGE =15V,TJ=125C
20 15 10 5 T = 25C, T =125C J J 0
RG = 2.2 L = 100 H VCE = 800V
200 150 100 50 0
VCE = 800V RG = 2.2 L = 100 H
10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 70 60 tr, RISE TIME (ns) tf, FALL TIME (ns) 50 40 30 20 10 10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 12000 EON2, TURN ON ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 2.2
G
10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 150 125 100 75 50 25
TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V RG = 2.2, L = 100H, VCE = 800V
RG = 2.2, L = 100H, VCE = 800V
TJ = 25 or 125C,VGE = 15V
0
10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 8000 EOFF, TURN OFF ENERGY LOSS (J) 7000 6000 5000 4000 3000 2000
TJ = 25C, VGE = 15V
V = 800V CE V = +15V GE R = 2.2
G
0
10000
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
8000
6000
4000
2000
TJ = 25C,VGE =15V
1000 10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 12000
V = 800V CE V = +15V GE R = 2.2
G
10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 25000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE T = 125C
J
0
0
SWITCHING ENERGY LOSSES (J)
Eon2,70A
20000
10000 8000 6000 4000 2000 0
Eon2,70A Eoff,70A
15000 Eoff,70A
10000
Rev D 7-2009
Eon2,35A Eoff,17.5A Eon2,17.5A 0 Eoff,35A
5000
Eon2,35A Eon2,17.5A
Eoff,35A Eoff,17.5A
050-7601
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
4,000 Cies 1,000 C, CAPACITANCE ( F)
P
APT35GN120B_S(G)
IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20
500
C0es 100 50 Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.35 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 0.3
Note:
0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
PDM
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz)
10
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % V = 800V CE R = 2.2
G
f max2 = Pdiss =
Pdiss - P cond E on2 + E off TJ - T C R JC
20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10
050-7601
Rev D 7-2009
APT35GN120B_S(G)
APT40DQ120
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
90% tr
Collector Current
A D.U.T.
5%
Switching Energy
10%
5%
CollectorVoltage
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90%
*DRIVER SAME TYPE AS D.U.T.
Gate Voltage td(off) CollectorVoltage 90% TJ = 125C
A V CE IC 100uH
tf 10%
V CLAMP
B
0
Collector Current
Switching Energy
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
Collector (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector Emitter
Heat Sink (Collector) and Leads are Plated
Rev D 7-2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
050-7601
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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